+ e+ d 2 0.129 (3.3) 0.119 (3.0) 0.433 (11.0) 0.422 (10.7) 0.110 (2.8) 0.091 (2.3) 1 3 4 0.020 (0.51) (sq) 0.472 (12.0) 0.457 (11.6) 0.249 (6.35) 0.243 (6.15) 0.39 (1.00) 0.34 (0.85) l c c l l c optical c l .295 (7.5) .272 (6.9) pin 1 anode pin 2 cathode pin 3 collector pin 4 emitter .133 (3.38) .073 (1.85) 0.125 (3.2) 0.119 (3.0) .315 (8.00) package dimensions features ? opaque housing ? low cost ? .035? apertures ? european ?pro electron? registered notes: 1. dimensions for all drawings are in inches (mm). 2. tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. phototransistor optical interrupter switch description the CNY36 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing.the gap in the housing provides a means of interrupting the signal with tape, cards, shaft encoders, or other opaque material, switching the o ut- put from an ?on? to an ?off? state. 4 3 1 2 schematic ? ? 2001 fairchild semiconductor corporation ds300283 8/02/01 1 of 4 www.fairchildsemi.com CNY36
www.fairchildsemi.com 2 of 4 8/02/01 ds300283 parameter test conditions symbol devices min typ max units input (emitter) forward voltage i f = 10 ma v f all ? ? 1.7 v reverse leakage current v r = 2 v i r all ? ? 1.0 a output (sensor) emitter to collector breakdown i e = 100 a, ee = 0 bv eco all 5.0 ? ? v collector to emitter breakdown i c = 10 ma, ee = 0 bv ceo all 30 ? ? v collector to emitter leakage v ce = 10 v, ee = 0 i ceo all ? ? 100 na coupled on-state collector current i f = 20 ma, v ce = 10 v i c(on) all 2.0 ? ? ma saturation voltage i f = 20 ma, i c = 25 av ce(sat) all ? ? 0.40 v turn-on time i f = 30 ma, v cc = 5 v, r l = 2.5 k ? t on all ?5 ?s turn-off time i f = 30 ma, v cc = 5 v, r l = 2.5 k ? t off all ?5 ?s electrical / optical characteristics (t a =25c)(all measurements made under pulse condition) phototransistor optical interrupter switch CNY36 parameter symbol rating unit operating temperature t opr -55 to +85 c storage temperature t stg -55 to +85 c soldering temperature (iron) (3,4 and 5) t sol-i 240 for 5 sec c soldering temperature (flow) (3 and 4) t sol-f 260 for 10 sec c input (emitter) continuous forward current i f 60 ma reverse voltage v r 3v power dissipation (1) p d 100 mw output (sensor) collector to emitter voltage v ceo 30 v emitter to collector voltage v eco 5.0 v power dissipation (t c = 25c) (1) p d 150 mw absolute maximum ratings (t a = 25c unless otherwise specified) note: 1. derate power dissipation linearly 1.67 mw/c above 25c. 2. derate power dissipation linearly 2.50 mw/c above 25c. 3. rma flux is recommended. 4. methanol or isopropyl alcohols are recommended as cleaning agents. 5. soldering iron tip 1/16? (1.6mm) minimum from housing.
ds300283 8/02/01 3 of 4 www.fairchildsemi.com figure 1. output current vs. input current .02 .01 1 i f , input current (ma) .04 .06 .08 .1 .2 .4 .6 .8 2 1 4 6 8 10 2 4 6 8 10 20 40 60 80 100 200 400 600 1000 i ce(on) , normalized output current i f = 20 ma p w = 100 sec prr = 100 pps v ce = 5 v normalized to pulsed figure 2. output current vs. temperature t a , ambient temperature ( c) .1 .2 .4 .6 .8 1 2 4 6 8 10 -55 -40 -20 0 20 60 80 40 100 i ce(on) , normalized output current i f = 20 ma, t a = 25 c v ce = 5 v, normalized to input pulsed i f = 100 ma i f = 60 ma i f = 30 ma i f = 20 ma i f = 10 ma i f = 5 ma figure 3. v ce(sat) vs. temperature t a , ambient temperature ( c) 0.6 0.8 1 2 3 -50 -25 0 25 50 75 100 v ce(sat) , normalized normalized to pulsed i f 30 ma pw = 100 s, prr = 100 pps i c = 1.8 ma , t a = 25 c i f 20 ma i c = 1.8 ma i f 60 ma i c = 3.6 ma i f 15 ma i c = 0.9 ma i f 30 ma i c = 1.8 ma figure 4. leakage current vs. temperature detector 0.1 25 t a , ambient temperature ( c) 1 10 2 10 1 10 3 50 75 100 i ceo , normalized dark current t a = 25 c v ce = 25 v v ce = 25 v normalized to v ce = 10 v 0.1 25 1 10 2 10 1 10 3 50 75 100 t a = 25 c v r = 5 v normalized to emitter t a , ambient temperature ( c) i r , normalized leakage current figure 5. switching speed vs. r l .45 .5 .6 1.5 .7 .8 .9 1k 2k 3k r l , load resistance ( ? ) 1 2 3 4.5 4 4k 5k 6k 7k 8k 9k 10k t on , and t off normalized i f r l + v cc pw = 300 s prr = 100 pps i f = 75 amps, v cc = 5v r l normalized to r l = 2.5 k ? figure 6. output current vs. distance .0001 .1 .01 0246810 d, distance (mm) d, distance (mils) .001 1.00 i ce(on) , normalized output current normalized to value with shield removed 78.7 157.5 236.2 315 393.7 t off t on black shield black shield d + e + d o d o phototransistor optical interrupter switch CNY36
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. phototransistor optical interrupter switch CNY36 www.fairchildsemi.com 4 of 4 8/02/01 ds300283
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